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Freescale Semiconductor Technical Data
Document Number: MRF7S19170H Rev. 0, 10/2006
RF Power Field Effect Transistors
N - Channel Enhancement - Mode Lateral MOSFETs
Designed for CDMA base station applications with frequencies from 1930 to 1990 MHz. Suitable for CDMA and multicarrier amplifier applications. To be used in Class AB and Class C for PCN - PCS/cellular radio and WLL applications. * Typical Single - Carrier W - CDMA Performance: VDD = 28 Volts, IDQ = 1400 mA, Pout = 50 Watts Avg., Full Frequency Band, 3GPP Test Model 1, 64 DPCH with 50% Clipping, Channel Bandwidth = 3.84 MHz, Input Signal PAR = 7.5 dB @ 0.01% Probability on CCDF. Power Gain -- 17.2 dB Drain Efficiency -- 32% Device Output Signal PAR -- 6.2 dB @ 0.01% Probability on CCDF ACPR @ 5 MHz Offset -- - 37.5 dBc in 3.84 MHz Channel Bandwidth * Capable of Handling 5:1 VSWR, @ 32 Vdc, 1960 MHz, 170 Watts CW Peak Tuned Output Power * Pout @ 1 dB Compression Point w 170 Watts CW Features * 100% PAR Tested for Guaranteed Output Power Capability * Characterized with Series Equivalent Large - Signal Impedance Parameters * Internally Matched for Ease of Use * Integrated ESD Protection * Greater Negative Gate - Source Voltage Range for Improved Class C Operation * Designed for Digital Predistortion Error Correction Systems * RoHS Compliant * In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
MRF7S19170HR3 MRF7S19170HSR3
1930 - 1990 MHz, 50 W AVG., 28 V SINGLE W - CDMA LATERAL N - CHANNEL RF POWER MOSFETs
CASE 465B - 03, STYLE 1 NI - 880 MRF7S19170HR3
CASE 465C - 02, STYLE 1 NI - 880S MRF7S19170HSR3
Table 1. Maximum Ratings
Rating Drain - Source Voltage Gate - Source Voltage Operating Voltage Storage Temperature Range Case Operating Temperature Operating Junction Temperature
(1,2)
Symbol VDSS VGS VDD Tstg TC TJ
Value - 0.5, +65 - 6.0, +10 32, +0 - 65 to +150 150 225
Unit Vdc Vdc Vdc C C C
Table 2. Thermal Characteristics
Characteristic Thermal Resistance, Junction to Case Case Temperature 80C, 170 W CW Case Temperature 72C, 25 W CW Symbol RJC Value (2,3) 0.25 0.31 Unit C/W
1. Continuous use at maximum temperature will affect MTTF. 2. MTTF calculator available at http://www.freescale.com/rf. Select Tools/Software/Application Software/Calculators to access the MTTF calculators by product. 3. Refer to AN1955, Thermal Measurement Methodology of RF Power Amplifiers. Go to http://www.freescale.com/rf. Select Documentation/Application Notes - AN1955.
(c) Freescale Semiconductor, Inc., 2006. All rights reserved.
MRF7S19170HR3 MRF7S19170HSR3 1
RF Device Data Freescale Semiconductor
Table 3. ESD Protection Characteristics
Test Methodology Human Body Model (per JESD22 - A114) Machine Model (per EIA/JESD22 - A115) Charge Device Model (per JESD22 - C101) Class 1A (Minimum) B (Minimum) IV (Minimum)
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted)
Characteristic Off Characteristics Zero Gate Voltage Drain Leakage Current (VDS = 65 Vdc, VGS = 0 Vdc) Zero Gate Voltage Drain Leakage Current (VDS = 28 Vdc, VGS = 0 Vdc) Gate - Source Leakage Current (VGS = 5 Vdc, VDS = 0 Vdc) On Characteristics Gate Threshold Voltage (VDS = 10 Vdc, ID = 372 Adc) Gate Quiescent Voltage (VDS = 28 Vdc, ID = 1400 mAdc) Fixture Gate Quiescent Voltage (1) (VDS = 28 Vdc, ID = 1400 mAdc, Measured in Functional Test) Drain - Source On - Voltage (VGS = 10 Vdc, ID = 3.72 Adc) Dynamic Characteristics (2) Reverse Transfer Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Output Capacitance (VDS = 28 Vdc 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc) Crss Coss -- -- 0.9 703 -- -- pF pF VGS(th) VGS(Q) VGG(Q) VDS(on) 1.2 -- 4 0.1 2 2.7 5.4 0.15 2.7 -- 7.6 0.3 Vdc Vdc Vdc Vdc IDSS IDSS IGSS -- -- -- -- -- -- 10 1 1 Adc Adc Adc Symbol Min Typ Max Unit
Functional Tests (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W Avg., f = 1932.5 MHz and f = 1987.5 MHz, Single - Carrier W - CDMA, 3GPP Test Model 1, 64 DPCH, 50% Clipping, PAR = 7.5 dB @ 0.01% Probability on CCDF. ACPR measured in 3.84 MHz Channel Bandwidth @ 5 MHz Offset. Power Gain Drain Efficiency Output Peak - to - Average Ratio @ 0.01% Probability on CCDF Adjacent Channel Power Ratio Input Return Loss Gps D PAR ACPR IRL 16 29 5.7 -- -- 17.2 32 6.2 - 37.5 - 16 19 -- -- - 35 -9 dB % dB dBc dB
1. VGG = 2 x VGS(Q). Parameter measured on Freescale Test Fixture, due to resistive divider network on the board. Refer to Test Circuit schematic. 2. Part internally matched both on input and output.
MRF7S19170HR3 MRF7S19170HSR3 2 RF Device Data Freescale Semiconductor
Table 4. Electrical Characteristics (TC = 25C unless otherwise noted) -- continued
Characteristic Video Bandwidth (Tone Spacing from 100 kHz to VBW) IMD3 = IMD3 @ VBW frequency - IMD3 @ 100 kHz <1 dBc (both sidebands) Gain Flatness in 60 MHz Bandwidth @ Pout = 170 W CW Deviation from Linear Phase in 60 MHz Bandwidth @ Pout = 170 W CW Group Delay @ Pout = 170 W CW, f = 1960 MHz Part - to - Part Insertion Phase Variation @ Pout = 170 W CW, f = 1960 MHz Gain Variation over Temperature Output Power Variation over Temperature Symbol VBW -- 25 -- Min Typ Max Unit MHz Typical Performances (In Freescale Test Fixture, 50 ohm system) VDD = 28 Vdc, IDQ = 1400 mA, 1930 - 1990 MHz Bandwidth
GF Delay G P1dB
-- -- -- -- -- --
0.5 2.06 4.7 16 0.015 0.01
-- -- -- -- -- --
dB ns dB/C dBm/C
MRF7S19170HR3 MRF7S19170HSR3 RF Device Data Freescale Semiconductor 3
R1 VBIAS
Z20 VSUPPLY +
C6
R2
C5
C4
C3
Z7
C8
C15
C16
C19
R3 RF INPUT Z1
Z9 Z10 Z11 Z12 Z13 Z14 Z15 Z16 Z17 Z18 RF Z19 OUTPUT
Z2
Z3
Z4 C7
Z5
Z6
Z8
C10
DUT C14 Z21 C13 C12
C1
C2
C11
C9
C17
C18
Z1* Z2* Z3* Z4 Z5 Z6 Z7 Z8 Z9 Z10 Z11
0.588 x 0.083 Microstrip 0.146 x 0.083 Microstrip 0.068 x 0.083 Microstrip 0.865 x 0.098 Microstrip 0.154 x 0.098 Microstrip 0.271 x 0.787 Microstrip 1.410 x 0.080 Microstrip 0.194 x 0.787 Microstrip 0.115 x 1.360 Microstrip 0.230 x 1.360 Microstrip 0.185 x 1.120 Microstrip
Z12 Z13* Z14* Z15* Z16* Z17, Z18 Z19 Z20, Z21 PCB
0.060 x 0.420 Microstrip 0.197 x 0.083 Microstrip 0.332 x 0.083 Microstrip 0.158 x 0.083 Microstrip 0.572 x 0.083 Microstrip 0.063 x 0.220 Microstrip 0.160 x 0.083 Microstrip 1.120 x 0.080 Microstrip Taconic TLX - 0300, 0.030, r = 2.5
* Variable for tuning
Figure 1. MRF7S19170HR3(HSR3) Test Circuit Schematic
Table 5. MRF7S19170HR3(HSR3) Test Circuit Component Designations and Values
Part C1, C2 C3, C8, C9, C10, C11 C4 C5 C6, C15, C16, C17, C18 C7 C12 C13 C14 C19 R1, R2 R3 Description 1.8 pF Chip Capacitors 8.2 pF Chip Capacitors 100 pF Chip Capacitor 100 nF Chip Capacitor 10 F Chip Capacitors 0.5 pF Chip Capacitor 1.5 pF Chip Capacitor 0.3 pF Chip Capacitor 0.8 pF Chip Capacitor 470 F, 63 V Electrolytic Capacitor, Axial 10 k, 1/4 W Chip Resistors 10 , 1/4 W Chip Resistor Part Number 100B1R8BW 100B8R2CW 100B101JW 200B104MW C5750X5R1H106MT 100B0R5BW 100B1R5BW 100B0R3BW 100B0R8BW 516D477M063PS7B CRCW12061001FKTA CRCW120610R0FKTA Manufacturer ATC ATC ATC ATC TDK ATC ATC ATC ATC Sprague Vishay Vishay
MRF7S19170HR3 MRF7S19170HSR3 4 RF Device Data Freescale Semiconductor
R2 R1 C5 C4 C3
C19
C6 C8 R3 C15 C16
C10 CUT OUT AREA C7
C11 C14 C13 C12
C1 C2
C9
C17
C18
MRF7S19170H Rev 0
Figure 2. MRF7S19170HR3(HSR3) Test Circuit Component Layout
MRF7S19170HR3 MRF7S19170HSR3 RF Device Data Freescale Semiconductor 5
TYPICAL CHARACTERISTICS
17 Gps, POWER GAIN (dB) 16 15 14
Gps D
34 33 32 VDD = 28 Vdc, Pout = 50 W (Avg.), IDQ = 1400 mA 31 Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 7.5 dB @ 0.01% -1 Probability (CCDF) -1.5
D, DRAIN EFFICIENCY (%) -10 PARC (dB) -15 -20 -25 -30 D, DRAIN EFFICIENCY (%) -10 PARC (dB) -15 -20 -25 -30 2100 mA 1400 mA 10 IRL, INPUT RETURN LOSS (dB) IRL, INPUT RETURN LOSS (dB)
18
35
IRL 13 12 11 10 1880 PARC
-2 -2.5 2040
1900
1920
1940
1960
1980
2000
2020
f, FREQUENCY (MHz)
Figure 3. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 50 Watts Avg.
18 17 Gps, POWER GAIN (dB) 16 15 14 IRL 13 12 PARC 11 10 1880 Gps VDD = 28 Vdc, Pout = 84 W (Avg.), IDQ = 1400 mA Single-Carrier W-CDMA, 3.84 MHz Channel Bandwidth, PAR = 7.5 dB @ 0.01% Probability (CCDF) D 44 43 42 41 40 -3 -3.4 -3.8 -4.2 2040
1900
1920
1940
1960
1980
2000
2020
f, FREQUENCY (MHz)
Figure 4. Output Peak - to - Average Ratio Compression (PARC) Broadband Performance @ Pout = 84 Watts Avg.
19 IMD, THIRD ORDER INTERMODULATION DISTORTION (dBc) VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz Two-Tone Measurements, 10 MHz Tone Spacing Gps, POWER GAIN (dB) 18 IDQ = 2100 mA 1750 mA 17 1400 mA 1050 mA -10 VDD = 28 Vdc, f1 = 1955 MHz, f2 = 1965 MHz Two-Tone Measurements, 10 MHz Tone Spacing -20
-30 IDQ = 700 mA -40 1050 mA -50 1750 mA
16
15 1
700 mA 10 100 400
-60 1 100 400 Pout, OUTPUT POWER (WATTS) PEP
Pout, OUTPUT POWER (WATTS) PEP
Figure 5. Two - Tone Power Gain versus Output Power
Figure 6. Third Order Intermodulation Distortion versus Output Power
MRF7S19170HR3 MRF7S19170HSR3 6 RF Device Data Freescale Semiconductor
TYPICAL CHARACTERISTICS
IMD, INTERMODULATION DISTORTION (dBc)
-20
VDD = 28 Vdc, IDQ = 1400 mA f1 = 1955 MHz, f2 = 1965 MHz Two-Tone Measurements, 10 MHz Tone Spacing
IMD, INTERMODULATION DISTORTION (dBc)
-10
0 -5 -10 -15 -20 -25 -30 -35 -40 -45 -50 -55 -60 1
VDD = 28 Vdc, Pout = 170 W (PEP), IDQ = 1400 mA Two-Tone Measurements (f1 + f2)/2 = Center Frequency of 1960 MHz
-30
IM3-U IM3-L IM5-U IM5-L IM7-U IM7-L 10 TWO-TONE SPACING (MHz) 100
-40
3rd Order
-50 -60 1
5th Order 7th Order 100 Pout, OUTPUT POWER (WATTS) PEP 400
Figure 7. Intermodulation Distortion Products versus Output Power
1 OUTPUT COMPRESSION AT THE 0.01% PROBABILITY ON THE CCDF (dB) VDD = 28 Vdc, IDQ = 1400 mA f = 1960 MHz, Input PAR = 7.5 dB 0
Figure 8. Intermodulation Distortion Products versus Tone Spacing
50 D, DRAIN EFFICIENCY (%) Ideal 45
-1 -1 dB = 45 W -2 -2 dB = 62 W -3 -3 dB = 84 W -4 30 Actual
40
35
30
35
40
45
50
55
60
65
70
75
80
85
25 90
Pout, OUTPUT POWER (WATTS)
Figure 9. Output Peak - to - Average Ratio Compression (PARC) versus Output Power
ACPR, UPPER AND LOWER RESULTS (dBc) -20 -30 19 VDD = 28 Vdc, IDQ = 1400 mA, f = 1960 MHz Single-Carrier W-CDMA, PAR = 7.5 dB, ACPR @ 5 MHz Offset in 3.84 MHz Integrated Bandwidth Uncorrected, Upper and Lower -40 DPD Corrected No Memory Correction -50 18 17 16 15 14 D 13 41 42 43 44 45 46 47 48 49 50 1 10 100 Pout, OUTPUT POWER (dBm) Pout, OUTPUT POWER (WATTS) CW VDD = 28 Vdc IDQ = 1400 mA f = 1960 MHz Gps TC = -30_C 25_C 85_C 85_C 45 30 15 0 400 -30_C 75 25_C 60 D, DRAIN EFFICIENCY (%) 90
-60 DPD Corrected with Memory Correction -70 40
Gps, POWER GAIN (dB)
Figure 10. Digital Predistortion Correction versus ACPR and Output Power
Figure 11. Power Gain and Drain Efficiency versus CW Output Power
MRF7S19170HR3 MRF7S19170HSR3 RF Device Data Freescale Semiconductor 7
TYPICAL CHARACTERISTICS
18 MTTF FACTOR (HOURS x AMPS2) IDQ = 1400 mA f = 1960 MHz 17 Gps, POWER GAIN (dB)
109
108
16
15 VDD = 24 V 28 V 13 0 100 200 300 Pout, OUTPUT POWER (WATTS) CW 32 V
107
14
106 90 110 130 150 170 190 210 230 250 TJ, JUNCTION TEMPERATURE (C) This above graph displays calculated MTTF in hours x ampere2 drain current. Life tests at elevated temperatures have correlated to better than 10% of the theoretical prediction for metal failure. Divide MTTF factor by ID2 for MTTF in a particular application.
Figure 12. Power Gain versus Output Power
Figure 13. MTTF Factor versus Junction Temperature
W - CDMA TEST SIGNAL
100 10
-10 -20 -30
3.84 MHz Channel BW
PROBABILITY (%)
1 Output Signal 0.1 (dB) 0.01 0.001 0.0001 0 W-CDMA. ACPR Measured in 3.84 MHz Channel Bandwidth @ "5 MHz Offset. PAR = 7.5 dB @ 0.01% Probability on CCDF 2 4 6 8 10 Input Signal
-40 -50 -60 -70 -80 -90 -100 -110 -9 -7.2 -5.4 -3.6 -1.8 0 1.8 3.6 5.4 7.2 9 f, FREQUENCY (MHz) -ACPR in 3.84 MHz Integrated BW -ACPR in 3.84 MHz Integrated BW
PEAK-TO-AVERAGE (dB)
Figure 14. CCDF W - CDMA 3GPP, Test Model 1, 64 DPCH, 50% Clipping, Single - Carrier Test Signal
Figure 15. Single - Carrier W - CDMA Spectrum
MRF7S19170HR3 MRF7S19170HSR3 8 RF Device Data Freescale Semiconductor
f = 2040 MHz Zload
Zo = 10
f = 1880 MHz
Zsource f = 2040 MHz
f = 1880 MHz
VDD = 28 Vdc, IDQ = 1400 mA, Pout = 50 W CW Avg. f MHz 1880 1900 1920 1940 1960 1980 2000 2020 2040 Zsource W 1.338 - j7.859 1.515 - j7.609 1.743 - j7.432 2.007 - j7.352 2.249 - j7.393 2.410 - j7.553 2.411 - j7.788 2.244 - j7.995 1.966 - j8.101 Zload W 0.967 - j2.868 0.942 - j2.725 0.920 - j2.585 0.893 - j2.449 0.865 - j2.313 0.841 - j2.192 0.820 - j2.073 0.802 - j1.957 0.779 - j1.834
Zsource = Test circuit impedance as measured from gate to ground. Zload = Test circuit impedance as measured from drain to ground. Output Matching Network
Input Matching Network
Device Under Test
Z
source
Z
load
Figure 16. Series Equivalent Source and Load Impedance MRF7S19170HR3 MRF7S19170HSR3 RF Device Data Freescale Semiconductor 9
ALTERNATIVE PEAK TUNE LOAD PULL CHARACTERISTICS
61 60 Pout, OUTPUT POWER (dBm) 59 58 57 56 55 54 53 52 51 32 33 34 35 P1dB = 53.25 dBm (211 W) P3dB = 53.97 dBm (249 W) P6dB = 54.33 dBm (271 W)
Ideal Pout, OUTPUT POWER (dBm)
62 61 60 59 58 57 56 55 54 53 52 VDD = 32 Vdc, IDQ = 1400 mA, Pulsed CW 12 sec(on), 10% Duty Cycle, f = 1960 MHz 33 34 35 36 37 38 39 40 41 42 43 44 45 P1dB = 54.14 dBm (259 W) Actual P3dB = 54.9 dBm (310 W) P6dB = 55.27 dBm (336 W) Ideal
Actual
VDD = 28 Vdc, IDQ = 1400 m, Pulsed CW 12 sec(on), 10% Duty Cycle, f = 1960 MHz 36 37 38 39 40 41 42 43 44
Pin, INPUT POWER (dBm) NOTE: Measured in a Peak Tuned Load Pull Fixture Test Impedances per Compression Level Zsource P3dB 2.34 - j9.24 Zload 0.79 - j2.94 P3dB
Pin, INPUT POWER (dBm) NOTE: Measured in a Peak Tuned Load Pull Fixture Test Impedances per Compression Level Zsource 2.34 - j9.24 Zload 0.79 - j2.94
Figure 17. Pulsed CW Output Power versus Input Power
Figure 18. Pulsed CW Output Power versus Input Power
MRF7S19170HR3 MRF7S19170HSR3 10 RF Device Data Freescale Semiconductor
PACKAGE DIMENSIONS
B G 4
1 2X
Q bbb
M
TA
M
B
M
(FLANGE) 3
B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. 4. RECOMMENDED BOLT CENTER DIMENSION OF 1.16 (29.57) BASED ON M3 SCREW. INCHES MIN MAX 1.335 1.345 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 1.100 BSC 0.057 0.067 0.175 0.205 0.872 0.888 0.871 0.889 .118 .138 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 33.91 34.16 13.6 13.8 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 27.94 BSC 1.45 1.70 4.44 5.21 22.15 22.55 19.30 22.60 3.00 3.51 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
K D TA
2
bbb
M
M
B
M
M bbb ccc H
M
(INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
TA TA
M
B B
M
TA
M
B S
N
M M M
(LID)
aaa C
M
TA
M
B
DIM A B C D E F G H K M N Q R S aaa bbb ccc
F E A
(FLANGE)
T A
SEATING PLANE
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
CASE 465B - 03 ISSUE D NI - 880 MRF7S19170H
B
1
(FLANGE)
B
K D TA
2
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M-1994. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION H IS MEASURED 0.030 (0.762) AWAY FROM PACKAGE BODY. M
bbb
M
B
M DIM A B C D E F H K M N R S aaa bbb ccc INCHES MIN MAX 0.905 0.915 0.535 0.545 0.147 0.200 0.495 0.505 0.035 0.045 0.003 0.006 0.057 0.067 0.170 0.210 0.872 0.888 0.871 0.889 0.515 0.525 0.515 0.525 0.007 REF 0.010 REF 0.015 REF MILLIMETERS MIN MAX 22.99 23.24 13.60 13.80 3.73 5.08 12.57 12.83 0.89 1.14 0.08 0.15 1.45 1.70 4.32 5.33 22.15 22.55 19.30 22.60 13.10 13.30 13.10 13.30 0.178 REF 0.254 REF 0.381 REF
M bbb ccc H C
M
(INSULATOR)
R ccc
M
(LID) M (INSULATOR) M
TA TA
M
B B
M
TA TA
M
B S B
N
M M M
(LID)
aaa
M
M
F E A
(FLANGE)
T A
SEATING PLANE
CASE 465C - 02 ISSUE D NI - 880S MRF7S19170HS
STYLE 1: PIN 1. DRAIN 2. GATE 3. SOURCE
MRF7S19170HR3 MRF7S19170HSR3 RF Device Data Freescale Semiconductor 11
PRODUCT DOCUMENTATION
Refer to the following documents to aid your design process. Application Notes * AN1955: Thermal Measurement Methodology of RF Power Amplifiers Engineering Bulletins * EB212: Using Data Sheet Impedances for RF LDMOS Devices
REVISION HISTORY
The following table summarizes revisions to this document.
Revision 0 Date Oct. 2006 Description
* Initial Release of Data Sheet
MRF7S19170HR3 MRF7S19170HSR3 12 RF Device Data Freescale Semiconductor
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MRF7S19170HR3 MRF7S19170HSR3
Document Number: RF Device DataMRF7S19170H Rev. 0, 10/2006 Freescale Semiconductor
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